The incorporation of arsenic in GaN by metalorganic chemical vapor deposition

被引：83

作者：

Li, X ^{[1
]}

Kim, S ^{[1
]}

Reuter, EE ^{[1
]}

Bishop, SG ^{[1
]}

Coleman, JJ ^{[1
]}

机构：

[1] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 16期

关键词：

D O I：

10.1063/1.121242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the successful incorporation of arsenic (As) in GaN during metalorganic chemical vapor deposition (MOCVD). A characteristic room-temperature luminescence band centered around 2.6 eV (480 nm), similar to the peak position of the As ion-implanted GaN, is found to be related to the As impurity in the MOCVD grown GaN:As films. The arsenic incorporation efficiency as a function of experimental conditions and structure is presented. Temperature- and power-dependent cathodoluminescence measurements have been performed to help establish the nature of the As-related peak. (C) 1998 American Institute of Physics.

引用

页码：1990 / 1992

页数：3

共 21 条

[1]

BANDIC ZZ, 1997, MAT RES SOC S P PITT, V449, P209

[2] Bowing parameter of the band-gap energy of GaNxAs1-x [J].