The incorporation of arsenic in GaN by metalorganic chemical vapor deposition

被引：83

作者：

Li, X ^{[1
]}

Kim, S ^{[1
]}

Reuter, EE ^{[1
]}

Bishop, SG ^{[1
]}

Coleman, JJ ^{[1
]}

机构：

[1] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 16期

关键词：

D O I：

10.1063/1.121242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the successful incorporation of arsenic (As) in GaN during metalorganic chemical vapor deposition (MOCVD). A characteristic room-temperature luminescence band centered around 2.6 eV (480 nm), similar to the peak position of the As ion-implanted GaN, is found to be related to the As impurity in the MOCVD grown GaN:As films. The arsenic incorporation efficiency as a function of experimental conditions and structure is presented. Temperature- and power-dependent cathodoluminescence measurements have been performed to help establish the nature of the As-related peak. (C) 1998 American Institute of Physics.

引用

收藏

页码：1990 / 1992

页数：3

相关论文

共 21 条

[11] Excitonic luminescence and absorption in dilute GaAs1-xNx alloy (x<0.3%) [J].

Makimoto, T ;

Saito, H ;

Nishida, T ;

Kobayashi, N .

APPLIED PHYSICS LETTERS, 1997, 70 (22) :2984-2986

[12] SHARP PHOTOLUMINESCENCE LINES FROM NITROGEN ATOMIC-LAYER-DOPED GAAS [J].

MAKIMOTO, T ;

KOBAYASHI, N .

APPLIED PHYSICS LETTERS, 1995, 67 (05) :688-690

[13] CATHODOLUMINESCENCE FROM GALLIUM NITRIDE IMPLANTED WITH ARSENIC OR PHOSPHORUS [J].

METCALFE, RD ;

WICKENDEN, D ;

CLARK, WC .

JOURNAL OF LUMINESCENCE, 1978, 16 (04) :405-415

[14]

MIYOSHI S, 1994, I PHYS C SER, V141, P97

[15] PHOTO-LUMINESCENCE IN P-DOPED GAN [J].

OGINO, T ;

AOKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (06) :1049-1052

[16] Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine [J].

Ougazzaden, A ;

LeBellego, Y ;

Rao, EVK ;

Juhel, M ;

Leprince, L ;

Patriarche, G .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2861-2863

[17] PHOTOLUMINESCENCE OF ION-IMPLANTED GAN [J].

PANKOVE, JI ;

HUTCHBY, JA .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5387-5390

[18] GROWTH OF GAASN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING PLASMA-CRACKED N-2 [J].

SATO, M .

JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) :99-103

[19] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J].

THOMAS, DG ;

HOPFIELD, JJ .

PHYSICAL REVIEW, 1966, 150 (02) :680-&

[20] Giant and composition-dependent optical bowing coefficient in GaAsN alloys [J].

Wei, SH ;

Zunger, A .

PHYSICAL REVIEW LETTERS, 1996, 76 (04) :664-667