Fabrication of graphene p-n-p junctions with contactless top gates

被引：117

作者：

Liu, Gang ^{[1
]}

Velasco, Jairo, Jr. ^{[1
]}

Bao, Wenzhong ^{[1
]}

Lau, Chun Ning ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 20期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2928234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed a multilevel lithography process to fabricate graphene p-n-p junctions with contactless, suspended top gates. This fabrication procedure minimizes damage or doping to the single atomic layer, which is only exposed to conventional resists and developers. The process does not require special equipment for depositing gate dielectrics or releasing sacrificial layers, and is compatible with annealing procedures that improve device mobility. Using this technique, we fabricate graphene devices with suspended local top gates, where the creation of high quality graphene p-n-p junctions is confirmed by transport data at zero and high magnetic fields. (C) 2008 American Institute of Physics.

引用

页数：3

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