Surface electronic properties of n- and p-type InGaN alloys

被引：14

作者：

King, P. D. C. ^{[1
]}

Veal, T. D. ^{[1
]}

Lu, Hai ^{[2
]}

Jefferson, P. H. ^{[1
]}

Hatfield, S. A. ^{[1
]}

Schaff, W. J. ^{[2
]}

McConville, C. F. ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2008年 / 245卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1002/pssb.200778452

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

X-ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n- and p-type c-plane In(x)Ga(1-x)N alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In rich) to depletion (Ga-rich), at x approximate to 0.43 for n-type alloys and a transition from surface inversion to hole depletion at x approximate to 0.59 for p-type alloys where downward band bending occurs across the composition range. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：881 / 883

页数：3

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