Optoelectronic properties of three-dimensional ZnO hybrid structure

被引：72

作者：

Jeong, MC ^{[1
]}

Oh, BY ^{[1
]}

Lee, W ^{[1
]}

Myoung, JM ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 10期

关键词：

D O I：

10.1063/1.1872209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Three-dimensional (3D) ZnO hybrid structure was fabricated by growing a ZnO buffer layer, a ZnO nanowire array, and. a ZnO film continuously through the control of supersaturation conditions. Lower and upper ends of vertically aligned nanowires in this hybrid structure formed seamless interfacial contacts with the buffer layer and the film for current conduction. Photocurrent was generated only when the ultraviolet (UV) light (lambda = 350 nm) was irradiated. This structure also exhibited different atmosphere-dependent responses to the UV light. The optoelectronic properties of the 3D structure are attributed to the photogenerated carriers and the surface reaction of negatively charged oxygen species in ZnO. nanowires. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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