Substrate/layer relationships in II-VIs

被引:8
作者
Irvine, SJC [1 ]
Stafford, A [1 ]
Ahmed, MU [1 ]
机构
[1] NE Wales Inst, Optoelect Mat Res Lab, Wrexham LL11 9NX, Wales
关键词
D O I
10.1016/S0022-0248(98)00961-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
This review explores the scope of substrate/layer relationships in TT-VI epitaxy. In addition to the lattice parameter mismatch, other important factors such as valence mismatch, polarity and thermal expansion match are considered. In some cases the lattice parameter mismatch is not the dominant factor in determining material quality such as ZnSe on GaAs. The ideal for high quality epilayers is to use lattice matched II-VI substrates but these have not always been available and alternative substrates have in some cases looked more attractive. Recent progress with CdTe and CdZnTe substrates is changing the prospect for IT-VT substrates. However, issues such as surface preparation and cleaning are highlighted with newly available ZnSe: substrates. Finally, the potential for II-VI growth onto microcrystalline and amorphous substrates is considered and possible approaches for promoting grain growth are discussed, (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:616 / 625
页数:10
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