Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Direct Transfer Printing

被引：5

作者：

Adachi, Susumu ^{[1
]}

Okamura, Shoichi ^{[1
]}

机构：

[1] Shimadzu Co Ltd, Technol Res Lab, Kyoto 6190237, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 10期

关键词：

ELECTRONICS; STAMP;

D O I：

10.1143/APEX.3.104101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter describes the fabrication of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) by direct transfer printing. An a-IGZO layer and a silicon dioxide (SiO2) layer were sequentially sputtered on a poly(dimethylsiloxane) (PDMS) stamp; the stamp was then pressed onto a glass substrate on which a gate metal had been previously deposited. Then, a-IGZO/SiO2 layers were successfully transferred by simply releasing the stamp from the substrate; a bottom-gate TFT was finally constructed. The measured current-voltage characteristics exhibited good field-effect mobility exceeding 10 cm(2) V-1 s(-1). The on/off current ratio and subthreshold slope were 4 x 105 and 0.86 V/decade, respectively. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

共 19 条

[11] Additive, nanoscale patterning of metal films with a stamp and a surface chemistry mediated transfer process: Applications in plastic electronics [J].

Loo, YL ;

Willett, RL ;

Baldwin, KW ;

Rogers, JA .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :562-564

[12] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

[13] Conversion of some siloxane polymers to silicon oxide by UV/ozone photochemical processes [J].

Ouyang, M ;

Yuan, C ;

Muisener, RJ ;

Boulares, A ;

Koberstein, JT .

CHEMISTRY OF MATERIALS, 2000, 12 (06) :1591-1596

[14] Large area electronics using printing, methods [J].

Parashkov, R ;

Becker, E ;

Riedl, T ;

Johannes, HH ;

Kowalsky, W .

PROCEEDINGS OF THE IEEE, 2005, 93 (07) :1321-1329

[15] Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors [J].

Park, Jin-Seong ;

Kim, Tae-Woong ;

Stryakhilev, Denis ;

Lee, Jae-Sup ;

An, Sung-Guk ;

Pyo, Yong-Shin ;

Lee, Dong-Bum ;

Mo, Yeon Gon ;

Jin, Dong-Un ;

Chung, Ho Kyoon .

APPLIED PHYSICS LETTERS, 2009, 95 (01)

[16] Additive jet printing of polymer thin-film transistors [J].

Paul, KE ;

Wong, WS ;

Ready, SE ;

Street, RA .

APPLIED PHYSICS LETTERS, 2003, 83 (10) :2070-2072

[17] Preparation of metallic films on elastomeric stamps and their application for contact processing and contact printing [J].

Schmid, H ;

Wolf, H ;

Allenspach, R ;

Riel, H ;

Karg, S ;

Michel, B ;

Delamarche, E .

ADVANCED FUNCTIONAL MATERIALS, 2003, 13 (02) :145-153

[18] Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors [J].

Suresh, A. ;

Muth, J. F. .

APPLIED PHYSICS LETTERS, 2008, 92 (03)

[19] High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering [J].

Yabuta, Hisato ;

Sano, Masafumi ;

Abe, Katsumi ;

Aiba, Toshiaki ;

Den, Tohru ;

Kumomi, Hideya ;

Nomura, Kenji ;

Kamiya, Toshio ;

Hosono, Hideo .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

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