Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

被引：541

作者：

Suresh, A. ^{[1
]}

Muth, J. F. ^{[1
]}

机构：

[1] N Carolina State Univ, ECE Dept, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 03期

关键词：

D O I：

10.1063/1.2824758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of bias stress on transistor performance are important when considering nontraditional channel materials for thin film transistors. Applying a gate bias stress to indium gallium zinc oxide transparent thin film transistors was found to induce a parallel threshold voltage shift without changing the field effect mobility or the subthreshold gate voltage swing. The threshold voltage change is logarithmically dependent on the duration of the bias stress implying a charge tunneling mechanism resulting in trapped negative charge screening the applied gate voltage. (C) 2008 American Institute of Physics.

引用

页数：3

共 17 条

[1] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Jeong, J ;

Keszler, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1

[2] Investigating the stability of zinc oxide thin film transistors [J].

Cross, R. B. M. ;

De Souza, M. M. .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[3] CHARGE-TRANSFER BY DIRECT TUNNELING IN THIN-OXIDE MEMORY TRANSISTORS [J].

FERRISPRABHU, AV .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) :524-530

[4] Recent advances in ZnO transparent thin film transistors [J].

Fortunato, E ;

Barquinha, P ;

Pimentel, A ;

Gonçalves, A ;

Marques, A ;

Pereira, L ;

Martins, R .

THIN SOLID FILMS, 2005, 487 (1-2) :205-211

[5] Stability of transparent zinc tin oxide transistors under bias stress [J].

Goerrn, P. ;

Hoelzer, P. ;

Riedl, T. ;

Kowalsky, W. ;

Wang, J. ;

Weimann, T. ;

Hinze, P. ;

Kipp, S. .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[6] Bias-induced threshold voltages shifts in thin-film organic transistors [J].

Gomes, HL ;

Stallinga, P ;

Dinelli, F ;

Murgia, M ;

Biscarini, F ;

de Leeuw, DM ;

Muck, T ;

Geurts, J ;

Molenkamp, LW ;

Wagner, V .

APPLIED PHYSICS LETTERS, 2004, 84 (16) :3184-3186

[7] Turnaround phenomenon of threshold voltage shifts in amorphous silicon thin film transistors under negative bias stress [J].

Huang, CY ;

Tsai, JW ;

Teng, TH ;

Yang, CJ ;

Cheng, HC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (10) :5763-5766

[8] CHARACTERIZATION OF INSTABILITY IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

KANEKO, Y ;

SASANO, A ;

TSUKADA, T .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) :7301-7305

[9] Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs [J].

Karim, KS ;

Nathan, A ;

Hack, M ;

Milne, WI .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (04) :188-190

[10] Bias stress induced threshold voltage shift in pentacene thin-film transistors [J].

Kawakami, Daisuke ;

Yasutake, Yuhsuke ;

Nishizawa, Hideyuki ;

Majima, Yutaka .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (42-45) :L1127-L1129

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