Structure and luminescence of GaN films by sputtering post-annealing-reaction technique

被引：3

作者：

Ma, HL

Yang, YG ^{[1
]}

Xue, CS

Zhuang, HZ

Hao, XT

Ma, J

机构：

[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China

[2] Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China

来源：

DIAMOND AND RELATED MATERIALS | 2003年 / 12卷 / 08期

基金：

中国国家自然科学基金;

关键词：

GaN films; quartz substrates; photoluminescence; sputtering post-annealing-reaction technique;

D O I：

10.1016/S0925-9635(03)00167-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gallium nitride (GaN) films were prepared on quartz substrates by sputtering post-annealing-reaction technique. The sputtered Ga2O3 films were used as a precursor for GaN growth. X-ray diffractometer, X-ray photoelectron spectroscopy and TEM measurement results indicate that the obtained GaN films are polycrystalline films with hexagonal structure, which consist of single-crystalline nanorods. A strong blue photoluminescence located at 458 nm and a UV photoluminescence located at 370 nm is observed at room temperature. (C) 2003 Elsevier Science B.V. All rights reserved.

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页码：1402 / 1405

页数：4

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