Optical absorption coefficient determination and physical modelling of strained SiGe/Si photodetectors.

被引：18

作者：

Polleux, JL ^{[1
]}

Rumelhard, C ^{[1
]}

机构：

[1] Conservatoire Natl Arts & Metiers, Lab Phys Composants Elect, F-75141 Paris 03, France

来源：

8TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2000年

关键词：

D O I：

10.1109/EDMO.2000.919052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physical model of the absorption in strained-SiGe on Si layers based on the one-phonon MacFarlane model is investigated Temperature variations are included as well as germanium content effect on parameters of the model. Results are compared to existing data and then are injected in a numerical-simulation-software. First optical simulations on strained SiGe photodiode are therefore performed which open the way to better understanding and optimisations of SiGe-based optoelectronic devices.

引用

页码：167 / 172

页数：6

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