Surface modification of (100) n-GaAs by radio frequency hydrogen plasmas

被引：7

作者：

Sullivan, JL ^{[1
]}

Saied, SO ^{[1
]}

Layberry, R ^{[1
]}

Cardwell, MJ ^{[1
]}

机构：

[1] Aston Univ, Dept Elect Engn & Appl Phys, Surface Sci Res Grp, Birmingham B4 7ET, W Midlands, England

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1998年 / 16卷 / 04期

关键词：

D O I：

10.1116/1.581383

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This article describes a study of surface changes of (100) GaAs subjected to rf hydrogen plasma treatment. Hydrogen plasma etching of GaAs leads to the reduction of the As oxide in the native oxide film, leaving a wholly Ga oxide surface film. Further etching of the surface leads to the production of a nonstoichiometric subsurface amorphous GaAs layer which varies from Ga rich at low chamber pressures to As rich as the pressure is increased. This effect is dependent on the ion energy and may be explained in terms of the penetration depth of the hydrogen ions relative to the oxide thickness. (C) 1998 American Vacuum Society. [S0734-2101(98)09304-X].

引用

页码：2567 / 2571

页数：5

共 17 条

[1] AMMONIA PLASMA PASSIVATION OF GAAS IN DOWNSTREAM MICROWAVE AND RADIOFREQUENCY PARALLEL PLATE PLASMA REACTORS [J].