Improved charge injection characteristics of Ge nanocrystals embedded in hafnium oxide for floating gate devices

被引：41

作者：

Das, S. ^{[1
]}

Das, K. ^{[1
]}

Singha, R. K. ^{[1
]}

Dhar, A. ^{[1
]}

Ray, S. K. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys Meteorol, Kharagpur 721302, W Bengal, India

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 23期

关键词：

D O I：

10.1063/1.2821114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-oxide-semiconductor capacitors with a trilayer structure consisting of Ge+HfO2 layers sandwiched between HfO2 tunnel and cap oxides were fabricated on p-Si substrates. Ge nanocrystals embedded in SiO2 were also studied for comparison. Cross-sectional transmission electron micrographs revealed the formation of spherical shaped Ge nanocrystals. The optical and charge storage characteristics of trilayer structures were studied through photoluminescence spectroscopy and capacitance-voltage measurements, respectively. An enhancement of the charge injection capability into nanocrystals was observed for the device with HfO2 as tunnel and cap oxide. The optical emission characteristics support the carrier confinement in Ge nanocrystals embedded in oxide matrices. (c) 2007 American Institute of Physics.

引用

页数：3

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