Well-oriented silicon thin films with high carrier mobility on polycrystalline substrates

被引：69

作者：

Findikoglu, AT ^{[1
]}

Choi, W ^{[1
]}

Matias, V ^{[1
]}

Holesinger, TG ^{[1
]}

Jia, QX ^{[1
]}

Peterson, DE ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 12期

关键词：

D O I：

10.1002/adma.200500040

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Si thin films, grown using ion-beam-assisted deposition of buffer layers on polycrystalline metal-alloy tapes (see Figure), show out-of-plane and in-plane mosaic spreads of 0.8 and 1.3, respectively, and a room-temperature Hall mobility of 89 cm(2) V-1 S-1 for a doping concentration of 4.4 x 10(16) cm(3). These results provide proof-of-concept for a promising materials technology that does not require lattice-matched, single-crystal substrates for deposition of well-oriented, high-carrier-mobility semiconductor thin films.

引用

页码：1527 / 1531

页数：5

共 14 条

[1]

[Anonymous], SEMICONDUCTORS SEMIM

[2] Biaxially textured IBAD-MgO templates for YBCO-coated conductors [J].

Arendt, PN ;

Foltyn, SR .

MRS BULLETIN, 2004, 29 (08) :543-550

[3] SILICON-ON-SAPPHIRE EPITAXY BY VACUUM SUBLIMATION - LEED-AUGER STUDIES AND ELECTRONIC PROPERTIES OF FILMS [J].

CHANG, CC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (03) :500-&

[4] Combined out-of-plane and in-plane texture control in thin films using ion beam assisted deposition [J].

Dong, L ;

Srolovitz, DJ ;

Was, GS ;

Zhao, Q ;

Rollett, AD .

JOURNAL OF MATERIALS RESEARCH, 2001, 16 (01) :210-216

[5] Role of beam divergence and ion-to-molecule flux ratio in ion-beam-assisted deposition texturing of MgO [J].

Findikoglu, AT ;

Kreiskott, S ;

te Riele, PM ;

Matias, V .

JOURNAL OF MATERIALS RESEARCH, 2004, 19 (02) :501-504

[6] Integration of GaN with Si using a AuGe-mediated wafer bonding technique [J].

Funato, M ;

Fujita, S ;

Fujita, S .

APPLIED PHYSICS LETTERS, 2000, 77 (24) :3959-3961

[7] HIGH-QUALITY CMOS IN THIN (100 NM) SILICON ON SAPPHIRE [J].

GARCIA, GA ;

REEDY, RE ;

BURGENER, ML .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :32-34

[8] Development of long Y-123 coated conductors by ion-beam-assisted-deposition and the pulsed-laser-deposition method [J].

Iijima, Y ;

Kakimoto, K ;

Sutoh, Y ;

Ajimura, S ;

Saitoh, T .

SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2004, 17 (05) :S264-S268

[9] Fabrication of Si/Al2O3/Si silicon on insulator structures grown by ultrahigh-vacuum CVD method [J].

Kimura, T ;

Sengoku, A ;

Ishida, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1001-1004

[10] Reel-to-reel preparation of ion-beam assisted deposition (IBAD)-MgO based coated conductors [J].

Kreiskott, S ;

Arendt, PN ;

Coulter, JY ;

Dowden, PC ;

Foltyn, SR ;

Gibbons, BJ ;

Matias, V ;

Sheehan, CJ .

SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2004, 17 (05) :S132-S134

← 1 2 →