HIGH-QUALITY CMOS IN THIN (100 NM) SILICON ON SAPPHIRE

被引：16

作者：

GARCIA, GA

REEDY, RE

BURGENER, ML

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 01期

关键词：

D O I：

10.1109/55.20404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：32 / 34

页数：3

共 15 条

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