Aluminium nitride thin films deposited by DC reactive magnetron sputtering

被引：44

作者：

Dimitrova, V

Manova, D

Paskova, T

Uzunov, T

Ivanov, N

Dechev, D

机构：

[1] Univ Rousse, Dept Phys, Rousse 7017, Bulgaria

[2] Univ Sofia, Dept Solid State Phys, Sofia 1164, Bulgaria

[3] Tech Univ Sliven, Lab New Technol, Sliven 8800, Bulgaria

来源：

VACUUM | 1998年 / 51卷 / 02期

关键词：

D O I：

10.1016/S0042-207X(98)00150-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AlN-films prepared by de reactive magnetron sputtering. AlN in an Ar+N-2 gas mixture have been prepared and their microstructure, hardness, refractive index and IR transmittance examined. At lambda = 640 nm the refractive index was 1.93 and k = 3 x 10(-3); high transmission occurred between [??] structure and oxygen on microhardness is discussed. (C) 1998 Elsevier Science Ltd. All rights reserved.

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页码：161 / 164

页数：4

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