Electronic switching in phase-change memories

被引：510

作者：

Pirovano, A ^{[1
]}

Lacaita, AL

Benvenuti, A

Pellizzer, F

Bez, R

机构：

[1] STMicroelect, Cent Res & Dev, I-20041 Agrate Brianza, Italy

[2] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[3] Politecn Milan, IFN, CNR Sez Milano, I-20133 Milan, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 03期

关键词：

chalcogenide; nonvolatile memories; phase-change memory (PCM) devices;

D O I：

10.1109/TED.2003.823243

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented. An original bandgap model consistent with the microscopic structure of both crystalline and amorphous chalcogenide is described, and a physical picture of the switching mechanism is proposed. Numerical simulations provide, for the first time, a quantitative description of the peculiar current-voltage curve of a Ge2Sb2Te5 resistor, in good agreement with measurements performed on test devices.

引用

页码：452 / 459

页数：8

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