Hole and Electron Extraction Layers Based on Graphene Oxide Derivatives for High-Performance Bulk Heterojunction Solar Cells

被引：283

作者：

Liu, Jun ^{[1
]}

Xue, Yuhua ^{[1
,2
]}

Gao, Yunxiang ^{[1
]}

Yu, Dingshan ^{[1
]}

Durstock, Michael ^{[3
]}

Dai, Liming ^{[1
]}

机构：

[1] Case Western Reserve Univ, Case Sch Engn, Dept Macromol Sci & Engn, Ctr Adv Sci & Engn Carbon Case4Carbon, Cleveland, OH 44106 USA

[2] Wenzhou Med Coll, Sch Ophthalmol & Optometry, Inst Adv Mat Nanobio Applicat, Zhejiang 325027, Peoples R China

[3] USAF, Res Lab, RXBP, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 17期

基金：

美国国家科学基金会;

关键词：

bulk heterojunction solar cells; graphene oxides; charge extraction; cesium; functionalization; POLYMER PHOTOVOLTAIC CELLS; CARBON; DONOR; FILMS;

D O I：

10.1002/adma.201104945

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs 2CO 3 to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2228 / 2233

页数：6

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