Current snap-back and negative differential resistance in layered PnνN structures

被引：1

作者：

Trivedi, M ^{[1
]}

Shenai, K ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect Engn & Comp Sci, Chicago, IL 60607 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 04期

关键词：

D O I：

10.1063/1.368356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This article reports an anomalous snap-back in the forward I-V characteristics of high power rectifiers having a buffer layer. The buffer layer is located at the rectifying junction. It is shown with the help of theoretical analysis and numerical simulations that the snap-back occurs due to a delay in the onset of high-level injection in the drift region. Conditions are identified for the observation of such an effect. Current density at which the snap-back occurs and the extent of the fall in voltage are shown to be strongly dependent on the doping, width and carrier lifetime of the buffer layer. (C) 1998 American Institute of Physics. [S0021-8979(98)02616-4].

引用

页码：2091 / 2098

页数：8

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