Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

被引：97

作者：

Chen, J

Sekiguchi, T ^{[1
]}

Xie, R

Ahmet, P

Chikyo, T

Yang, D

Ito, S

Yin, F

机构：

[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan

[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[4] Natl Inst Mat Sci, Met Proc Grp, Tsukuba, Ibaraki 3050047, Japan

来源：

SCRIPTA MATERIALIA | 2005年 / 52卷 / 12期

关键词：

EBIC; EBSD; grain boundary defects; elemental semiconductor;

D O I：

10.1016/j.scriptamat.2005.03.010

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special E and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (< 3%) at 300 K and strong (30-40%) at 100 K. In the contaminated me-Si, SA GBs showed stronger EBIC contrast than Sigma and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：1211 / 1215

页数：5

共 22 条

[1] ELECTRICAL-ACTIVITY OF THE 1ST-ORDER AND 2ND-ORDER TWINS AND GRAIN-BOUNDARIES IN SILICON [J].