High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors

被引：81

作者：

Fortunato, E. ^{[1
]}

Barquinha, P.

Goncalves, G.

Pereira, L.

Martins, R.

机构：

[1] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci CENIMAT I3N, P-2829516 Caparica, Portugal

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 03期

关键词：

D O I：

10.1016/j.sse.2007.10.032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Staggered bottom gate transparent thin film transistors (TTFTs) have been produced by rf inagnetron sputtering at room temperature, using amorphous indium zinc oxide (IZO) semiconductor, for the channel as well as for the drain and source regions. The obtained TTFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm(2)/V s, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7 x 10(7). The high performances presented by these TTFTs produced at room temperature, make these TFTs a promising candidate for flexible, wearable, disposable portable electronics as well as battery-powered applications. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：443 / 448

页数：6

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