Structure, morphology, and growth dynamics of perfluoro-pentacene thin films

被引：69

作者：

Kowarik, Stefan ^{[1
]}

Gerlach, Alexander ^{[1
]}

Hinderhofer, Alexander ^{[1
]}

Milita, Silvia ^{[2
]}

Borgatti, Francesco ^{[3
]}

Zontone, Federico ^{[4
]}

Suzuki, Toshiyasu ^{[5
]}

Biscarini, Fabio ^{[3
]}

Schreiber, Frank ^{[1
]}

机构：

[1] Univ Tubingen, IAP, D-72076 Tubingen, Germany

[2] CNR, IMM, I-40129 Bologna, Italy

[3] CNR, ISMN, I-40129 Bologna, Italy

[4] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[5] Inst Mol Sci, Okazaki, Aichi 4448787, Japan

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2008年 / 2卷 / 03期

关键词：

D O I：

10.1002/pssr.200802052

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report high structural order in thin films of the organic semiconductor perfluoro-pentacene (PFP), which is a candidate material for n-type applications, deposited by vacuum sublimation on oxidized silicon wafers. Bragg reflections up to high order in both specular and grazing incidence geometries and a mosaicity of less than 0.01 degrees demonstrate the well defined structure. The thin film entirely consists of crystallites with a. structure close to the bulk phase without any contamination with a second phase. Real-time X-ray measurements show that PFP grows in a Stranski-Krastanov growth mode with the first monolayer wetting the substrate before 3d-growth sets in during growth of the second monolayer. Implications for its use are discussed. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：120 / 122

页数：3

共 10 条

[1] Spatially correlated charge transport in organic thin film transistors [J].