Multiferroic properties of sputtered BiFeO3 thin films

被引：108

作者：

Li, Yibin ^{[1
,2
]}

Sritharan, Thirumany ^{[1
]}

Zhang, Sam ^{[3
]}

He, Xiaodong ^{[2
]}

Liu, Yang ^{[4
]}

Chen, Tupei ^{[4
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[2] Harbin Inst Technol, Sch Astronaut, Ctr Composite Mat, Harbin 150001, Peoples R China

[3] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore

[4] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 13期

关键词：

D O I：

10.1063/1.2901871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A cosputtering method was used to deposit BiFeO3 thin films on Pt/Ti/SiO2/Si substrates. It was confirmed as a polycrystalline film with a tetragonal crystal structure in the annealed state. Both Fe2+ and Fe3+ ions were found to coexist in the film. The leakage current density is as low as 10(-3) A/cm(2) at 120 kV/cm. This sputtered film shows multiferroic properties exhibiting a saturated ferroelectric loop with a large remnant polarization of 37 mu C/cm(2) and a saturated ferromagnetic loop with saturation magnetization of 21 emu/cm(3) at room temperature.

引用

页数：3

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