Tunneling spectroscopy of graphene-boron-nitride heterostructures

被引：70

作者：

Amet, F. ^{[1
]}

Williams, J. R. ^{[2
]}

Garcia, A. G. F. ^{[2
]}

Yankowitz, M. ^{[2
]}

Watanabe, K. ^{[3
]}

Taniguchi, T. ^{[3
]}

Goldhaber-Gordon, D. ^{[2
]}

机构：

[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[3] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 07期

基金：

美国国家科学基金会;

关键词：

FIELD;

D O I：

10.1103/PhysRevB.85.073405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the fabrication and measurement of a graphene tunnel junction using hexagonal-boron nitride as a tunnel barrier between graphene and a metal gate. The tunneling behavior into graphene is altered by the interactions with phonons and the presence of disorder. We extract properties of graphene and observe multiple phonon-enhanced tunneling thresholds. Finally, differences in the measured properties of two devices are used to shed light on mutually contrasting previous results of scanning tunneling microscopy in graphene.

引用

页数：5

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