Stress, hydration, and optical absorption in ion-implanted aluminum oxide

被引：1

作者：

Arnold, GW ^{[1
]}

机构：

[1] Consultants Int, Tijeras, NM 87059 USA

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1998年 / 253卷 / 1-2期

关键词：

Al2O3; ion implantation; stress; hydration; O-vacancy production;

D O I：

10.1016/S0921-5093(98)00711-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 [材料科学与工程]; 080502 [材料学];

摘要：

The surface stress induced by energetic implants (Ar, Xe) promotes ambient hydration (max. similar to 1 at.%) into Al2O3 for collisional deposition energies of 10(21)-10(22) keV cm(-3). Al implants are anomalous in that they induce hydration above 10(21) keV cm(-3) that rises near-linearly with no saturation at the highest deposition levels (similar to 10(24) keV cm(-3)). Both Al and H produce anomalously large F-centre concentrations; stress measurements show near-coincidence behaviour reflecting their influence on O-vacancy production. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：71 / 77

页数：7

共 17 条

[1]

ION-IMPLANTATION EFFECTS IN AL2O3 - HYDRATION AND OPTICAL-ABSORPTION [J].