Anisotropy of chemical mechanical polishing in silicon carbide substrates

被引：74

作者：

Chen, Xiu-Fang ^{[1
]}

Xu, Xian-Gang ^{[1
]}

Hu, Xiao-Bo ^{[1
]}

Li, Juan ^{[1
]}

Jiang, Shou-Zhen ^{[1
]}

Ning, Li-Na ^{[1
]}

Wang, Ying-Min ^{[1
]}

Jiang, Min-Hua ^{[1
]}

机构：

[1] Shandong Univ, State Key Lab Crystal Mat, Shandong 250100, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2007年 / 142卷 / 01期

基金：

中国国家自然科学基金;

关键词：

SiC; CMP; anisotropy;

D O I：

10.1016/j.mseb.2007.06.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The chemical mechanical polishing (CMP) of the Si face (0001), the C face (000 (1) over bar), the a face(11 (2) over bar0) and them face (1 (1) over bar 00) of silicon carbide (SiC) wafers was investigated. It was found that the removal rate and surface quality varied greatly with the different crystal face orientations during the CMP. Surface quality was characterized with atomic force microscopy (AFM) in terms of root mean square (RMS) roughness and high-resolution X-ray diffractometry (HRXRD). The optimum CMP process yielded a superior Si face finish with 0.096 nm RMS roughness, while no polishing action was observed on the C face. Results were explained in light of the atomic structure. CMP mechanisms of four faces were analyzed based on different polishing results. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：28 / 30

页数：3

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