Modified Deal Grove model for the thermal oxidation of silicon carbide

被引：213

作者：

Song, Y ^{[1
]}

Dhar, S

Feldman, LC

Chung, G

Williams, JR

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Interdisciplinary Program Mat Sci, Nashville, TN 37235 USA

[3] Dow Corning Inc, Tampa, FL 33619 USA

[4] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 09期

关键词：

D O I：

10.1063/1.1690097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A modified Deal Grove model for the oxidation of 4H-SiC is presented, which includes the removal of the carbon species. The model is applied to data on the oxidation rates for the (0001) Si, (000 (1) over bar) C, and (11 (2) over bar0) a faces, which are performed in 1 atm dry oxygen and in the temperature range 950-1150 degreesC. Analysis within the model provides a physical explanation for the large crystal-face dependent oxidation rates observed. (C) 2004 American Institute of Physics.

引用

页码：4953 / 4957

页数：5

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