OXIDATION OF 6H-ALPHA SILICON-CARBIDE PLATELETS

被引:76
作者
HARRIS, RCA [1 ]
机构
[1] UNIV ARIZONA,ELECT ENGN DEPT,TUCSON,AZ 85721
关键词
D O I
10.1111/j.1151-2916.1975.tb18969.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:7 / 9
页数:3
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共 10 条
[2]  
CHANG HC, 1966, NAS811861 CONTR, P141
[3]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[4]   OXIDATION BEHAVIOR OF SILICON CARBIDE [J].
ERVIN, G .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1958, 41 (09) :347-352
[5]   OXIDATION OF SILICON CARBIDE AT 1150 DEGREES TO 1400 DEGREES C AND AT 9 X 10 TO 5 X 10-1 TORR OXYGEN PRESSURE [J].
GULBRANS.EA ;
ANDREW, KF ;
BRASSART, FA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1311-&
[6]   EFFECTS OF OXYGEN PARTIAL PRESSURE ON THE OXIDATION OF SILICON CARBIDE [J].
JORGENSEN, PJ ;
WADSWORTH, ME ;
CUTLER, IB .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1960, 43 (04) :209-212
[7]   OXIDATION OF SILICON CARBIDE [J].
JORGENSEN, PJ ;
WADSWORTH, ME ;
CUTLER, IB .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1959, 42 (12) :613-616
[8]   ON RATES OF OXIDATION OF SILICON + OF SILICON CARBIDE IN OXYGEN + CORRELATION WITH PERMEABILITY OF SILICA GLASS [J].
MOTZFELDT, K .
ACTA CHEMICA SCANDINAVICA, 1964, 18 (07) :1596-+
[9]  
NAKATOGAWA T, 1954, KOGYO KAGAKU ZASSHI, V57, P348
[10]   TEMPERATURE AND OXYGEN PRESSURE DEPENDENCE OF SILICON CARBIDE OXIDATION [J].
PULTZ, WW .
JOURNAL OF PHYSICAL CHEMISTRY, 1967, 71 (13) :4556-&