High-dielectric constant thin films for dynamic random access memories (DRAM)

被引：225

作者：

Scott, JF ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[2] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 1998年 / 28卷

关键词：

ferroelectric; oxide ferroelectrics; perovskite structures; capacitors;

D O I：

10.1146/annurev.matsci.28.1.79

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We discuss high-dielectric films, in general, oxide ferroelectrics based on simple perovskite structures and related Aurivillius-phase layered structure perovskites employed as thin-film capacitors in dynamic random access memories (DRAMs). Emphasis is on breakdown mechanisms and limits, leakage currents, electrodes and electrode interfaces, scaling to submicron geometries, and deposition techniques.

引用

页码：79 / 100

页数：22

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