Impact of planar microcavity effects on light extraction - Part II: Selected exact simulations and role of photon recycling

被引:124
作者
Benisty, H [1 ]
De Neve, H
Weisbuch, C
机构
[1] Ecole Polytech, UMR 7643 CNRS, Phys Mat Condensee Lab, F-91128 Palaiseau, France
[2] Univ Ghent, IMEC, Dept Informat Technol, B-9000 Ghent, Belgium
关键词
cavities; distributed feedback devices; Fabry-Perot resonators; light-emitting diodes; light sources; microcavities; semiconductor device modeling;
D O I
10.1109/3.709579
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper we use an exact calculation of dipole emission modifications in an arbitrary multilayer structure to obtain the extraction efficiency from realistic planar microcavities. Additional insights gained through this exact approach compared to the simplified one of Part I of this paper are first discussed in the case of a dielectric slab. We next optimize for the extraction purpose asymmetric cavities bounded by metal on one side and dielectric mirrors on the output side for any pair of material indices in a broad range (n = 1.4-4). The decrease of extraction when taking into account relative linewidths of the source of a few percent is shown to be moderate, allowing the large enhancements of monochromatic fight to be maintained in many useful cases. The fractions of power emitted into guided modes, leaky modes, etc., are detailed. The beneficial role of possible photon recycling (reabsorption of emitted photons by the active layer) on extraction efficiency is evaluated using the fractions of power in guided and leaky modes. Extraction efficiencies in the 50% range are predicted for optimized, hybrid, planar metal-semiconductor structures for a wide range of active materials and wavelengths. We show that exact calculations justify the simple model used in Part I evaluating the extraction efficiency of a microcavity-based Light-emitting diode as l/m(c) where m(c) is the effective cavity order.
引用
收藏
页码:1632 / 1643
页数:12
相关论文
共 53 条
  • [31] VERY HIGH-EFFICIENCY SEMICONDUCTOR WAFER-BONDED TRANSPARENT-SUBSTRATE (ALXGA1-X)0.5IN0.5P/GAP LIGHT-EMITTING-DIODES
    KISH, FA
    STERANKA, FM
    DEFEVERE, DC
    VANDERWATER, DA
    PARK, KG
    KUO, CP
    OSENTOWSKI, TD
    PEANASKY, MJ
    YU, JG
    FLETCHER, RM
    STEIGERWALD, DA
    CRAFORD, MG
    ROBBINS, VM
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (21) : 2839 - 2841
  • [32] KISH FA, 1999, HIGH BRIGHTNESS LIGH, P149
  • [33] KOCH TL, 1995, INTEGRATED OPTOELECT, P557
  • [34] Koike M, 1996, APPL PHYS LETT, V68, P1403, DOI 10.1063/1.116094
  • [35] THEORY OF OPTICAL-ENVIRONMENT-DEPENDENT SPONTANEOUS-EMISSION RATES FOR EMITTERS IN THIN-LAYERS
    LUKOSZ, W
    [J]. PHYSICAL REVIEW B, 1980, 22 (06): : 3030 - 3038
  • [37] EMERGING GALLIUM NITRIDE BASED DEVICES
    MOHAMMAD, SN
    SALVADOR, AA
    MORKOC, H
    [J]. PROCEEDINGS OF THE IEEE, 1995, 83 (10) : 1306 - 1355
  • [38] MOVPE: Is there any other technology for optoelectronics?
    Moon, RL
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 1 - 10
  • [39] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES
    MORKOC, H
    STRITE, S
    GAO, GB
    LIN, ME
    SVERDLOV, B
    BURNS, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) : 1363 - 1398
  • [40] Group III-V nitride-based ultraviolet blue-green-yellow light-emitting diodes and laser diodes
    Nakamura, S
    [J]. HIGH BRIGHTNESS LIGHT EMITTING DIODES, 1997, 48 : 391 - 443