Group III-V nitride-based ultraviolet blue-green-yellow light-emitting diodes and laser diodes

被引:11
作者
Nakamura, S [1 ]
机构
[1] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 774, Japan
来源
HIGH BRIGHTNESS LIGHT EMITTING DIODES | 1997年 / 48卷
关键词
D O I
10.1016/S0080-8784(08)62409-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:391 / 443
页数:53
相关论文
共 54 条
[1]   EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].
AKASAKI, I ;
AMANO, H ;
KOIDE, Y ;
HIRAMATSU, K ;
SAWAKI, N .
JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) :209-219
[2]   ROOM-TEMPERATURE VIOLET STIMULATED-EMISSION FROM OPTICALLY PUMPED ALGAN/GAINN DOUBLE-HETEROSTRUCTURE [J].
AMANO, H ;
TANAKA, T ;
KUNII, Y ;
KATO, K ;
KIM, ST ;
AKASAKI, I .
APPLIED PHYSICS LETTERS, 1994, 64 (11) :1377-1379
[3]   P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].
AMANO, H ;
KITO, M ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114
[4]   METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].
AMANO, H ;
SAWAKI, N ;
AKASAKI, I ;
TOYODA, Y .
APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355
[5]  
Amano H., 1991, Oyo Buturi, V60, P163
[6]   TIME-RESOLVED SPECTROSCOPY OF ZN-DOPED AND CD-DOPED GAN [J].
BERGMAN, P ;
YING, G ;
MONEMAR, B ;
HOLTZ, PO .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) :4589-4592
[7]   HYDROGENATION OF P-TYPE GALLIUM NITRIDE [J].
BRANDT, MS ;
JOHNSON, NM ;
MOLNAR, RJ ;
SINGH, R ;
MOUSTAKAS, TD .
APPLIED PHYSICS LETTERS, 1994, 64 (17) :2264-2266
[8]  
CRAFORD MG, 1992, CIRCUITS DEVICES SEP, P24
[9]   STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE [J].
DINGLE, R ;
SHAKLEE, KL ;
LEHENY, RF ;
ZETTERSTROM, RB .
APPLIED PHYSICS LETTERS, 1971, 19 (01) :5-+
[10]   HIGH-BRIGHTNESS BLUE AND GREEN LIGHT-EMITTING-DIODES [J].
EASON, DB ;
YU, Z ;
HUGHES, WC ;
ROLAND, WH ;
BONEY, C ;
COOK, JW ;
SCHETZINA, JF ;
CANTWELL, G ;
HARSCH, WC .
APPLIED PHYSICS LETTERS, 1995, 66 (02) :115-117