Ga2O3 nanoribbons:: Synthesis, characterization, and electronic properties

被引：100

作者：

Fu, L ^{[1
]}

Liu, YQ ^{[1
]}

Hu, P ^{[1
]}

Xiao, K ^{[1
]}

Yu, G ^{[1
]}

Zhu, DB ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China

来源：

CHEMISTRY OF MATERIALS | 2003年 / 15卷 / 22期

关键词：

D O I：

10.1021/cm0343655

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Semiconductive Ga2O3 nanoribbons have been synthesized via hydrogen-assisted thermal evaporation at 1000 degreesC. The width of the nanoribbons could be controlled by adjusting the content of hydrogen in a mixture of carrier gases. The room-temperature photoluminescence spectrum reveals that there exists a strong blue emission band centered at 430 nm. The blue emission is mainly attributed to the oxygen vacancies in the Ga2O3 nanoribbons. We have fabricated a Schottky junction diode, utilizing individual Ga2O3 nanoribbons, and studied its electrical transport properties. The measured current-voltage characteristic exhibited clear rectifying behavior with a turn-on voltage of 0.5 V and a rectification ratio of 2.5 x 10(4) at +/-2 V.

引用

页码：4287 / 4291

页数：5

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