High-resolution photoemission spectroscopy study of clean and Au-nanowire-decorated Si(5512) surfaces

被引:13
作者
Ahn, JR [1 ]
Choi, WH [1 ]
Kim, YK [1 ]
Lee, HS [1 ]
Yeom, HW [1 ]
机构
[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120746, South Korea
关键词
D O I
10.1103/PhysRevB.68.165314
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have examined the Si 2p photoemission line shape of the clean Si(5 5 12)2x1 surface in detail and have investigated the evolution of the Au-induced nanowires on this surface at different temperatures with low-energy-electron diffraction and photoemission spectroscopy. The Si 2p spectra from the clean 2x1 surface exhibit very complex line shapes composed at least of five different surface-related components. Possible origins of the most distinct surface component with a surface core-level shift of -0.62 eV are discussed within the three different structure models proposed so far. Upon Au deposition, the intensity of that particular surface component was largely reduced indicating that the Au adsorbates interact dominantly with the specific Si surface atoms related. With an annealing above 500degreesC after Au deposition of 0.2 ML, the surface drastically changes into a metallic phase, as shown clearly in the valence band photoemission spectra, along with the gradual formation of the (337)x2 facets observed in LEED. In this transition, a new Au 4f component appears while the Si 2p core-level spectra keep alike. This indicates that the surface metallization involves the rearrangement of Au adsorbates, possibly the formation of new Au chains on the surface.
引用
收藏
页数:6
相关论文
共 25 条
[1]  
Ahn JR, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.153403
[2]   Observation of a quasi-1D Mott-Hubbard insulator: The re-entrant Na/Si(111)-3 x 1 surface [J].
Ahn, JR ;
Kim, ND ;
Lee, SS ;
Lee, KD ;
Yu, BD ;
Jeon, D ;
Kong, K ;
Chung, JW .
EUROPHYSICS LETTERS, 2002, 57 (06) :859-865
[3]   STM studies of 1-D noble metal growth on silicon [J].
Baski, AA ;
Jones, KM ;
Saoud, KM .
ULTRAMICROSCOPY, 2001, 86 (1-2) :23-30
[4]   1-D nanostructures grown on the Si(5512) surface [J].
Baski, AA ;
Saoud, KM ;
Jones, KM .
APPLIED SURFACE SCIENCE, 2001, 182 (3-4) :216-222
[5]   A STABLE HIGH-INDEX SURFACE OF SILICON - SI(5 5 12) [J].
BASKI, AA ;
ERWIN, SC ;
WHITMAN, LJ .
SCIENCE, 1995, 269 (5230) :1556-1560
[6]   Reconstructions of Ag on high-index silicon surfaces [J].
Blankenship, SR ;
Song, HH ;
Baski, AA ;
Carlisle, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04) :1615-1620
[7]   Fractional band filling in an atomic chain structure [J].
Crain, JN ;
Kirakosian, A ;
Altmann, KN ;
Bromberger, C ;
Erwin, SC ;
McChesney, JL ;
Lin, JL ;
Himpsel, FJ .
PHYSICAL REVIEW LETTERS, 2003, 90 (17) :4-176805
[8]   Atomic structure of the Si(113)-(3 x 1) surface: Charge transfer within tetramers [J].
Hwang, CC ;
Kim, HS ;
Kim, YK ;
Kim, JS ;
Park, CY ;
Kim, KJ ;
Kang, TH ;
Kim, B .
PHYSICAL REVIEW B, 1999, 59 (23) :14864-14867
[9]  
JEONG SJ, UNPUB
[10]   CORE-LEVEL SPECTROSCOPY OF THE CLEAN SI(001) SURFACE - CHARGE-TRANSFER WITHIN ASYMMETRIC DIMERS OF THE 2X1 AND C(4X2) RECONSTRUCTIONS [J].
LANDEMARK, E ;
KARLSSON, CJ ;
CHAO, YC ;
UHRBERG, RIG .
PHYSICAL REVIEW LETTERS, 1992, 69 (10) :1588-1591