Electronic structure of divacancy-hydrogen complexes in silicon

被引：17

作者：

Coutinho, J ^{[1
]}

Torres, VJB

Jones, R

Öberg, S

Briddon, PR

机构：

[1] Univ Aveiro, Dept Phys, P-3810 Aveiro, Portugal

[2] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[3] Lulea Univ Technol, Dept Math, S-97187 Lulea, Sweden

[4] Newcastle Univ, Sch Nat Sci, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2003年 / 15卷 / 39期

关键词：

D O I：

10.1088/0953-8984/15/39/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Divacancy-hydrogen complexes (V2H and V2H2) in Si are studied by ab initio modelling using large supercells. Here we pay special attention to their electronic structure, showing that these defects produce deep carrier traps. Calculated electrical gap levels indicate that V2H2 is an acceptor, whereas V2H is amphoteric, with levels close to those of the well known divacancy. Finally our results are compared with the available data from deep level transient spectroscopy and electron paramagnetic resonance experiments.

引用

页码：S2809 / S2814

页数：6

共 26 条

[11] Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon [J].