Low temperature photo-oxidation of silicon using deep UV radiation

被引：21

作者：

Zhang, JY

Boyd, IW

机构：

[1] Electron. and Electrical Engineering, University College London, London WC1E 7JE, Torrington Place

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 22期

关键词：

oxidation; semiconductor devices; silicon;

D O I：

10.1049/el:19961377

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Direct photo-oxidation of silicon at a temperature of 250 degrees C has been investigated using vacuum ultraviolet radiation. The oxidation rate is more than three times greater than that obtained at 350 degrees C using a low pressure mercury lamp. Ellipsometry, Fourier transform infrared spectroscopy, capacitance-voltage and current-voltage measurements indicate these to be high quality layers.

引用

页码：2097 / 2098

页数：2

共 11 条

[1] LOW-PRESSURE PHOTODEPOSITION OF SILICON-NITRIDE FILMS USING A XENON EXCIMER LAMP
BERGONZO, P
BOYD, IW
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (13) : 1757 - 1759
[2] A STUDY OF THIN SILICON DIOXIDE FILMS USING INFRARED-ABSORPTION TECHNIQUES
BOYD, IW
WILSON, JIB
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4166 - 4172
[3] LASER-INDUCED OXIDATION OF SILICON
BOYD, IW
WILSON, JIB
WEST, JL
[J]. THIN SOLID FILMS, 1981, 83 (04) : L173 - L176
[4] BOYD IW, 1993, JPN J APPL PHYS 1, V32, P6141, DOI 10.1143/JJAP.32.6141
[5] SILENT-DISCHARGE DRIVEN EXCIMER UV SOURCES AND THEIR APPLICATIONS
KOGELSCHATZ, U
[J]. APPLIED SURFACE SCIENCE, 1992, 54 : 410 - 423
[6] MAGNETICALLY EXCITED PLASMA OXIDATION OF SI
NAGASAWA, H
KITAJIMA, H
KITAYAMA, D
OKAMOTO, Y
IKOMA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9A): : L1103 - L1106
[7] LOW-TEMPERATURE OXIDATION OF CRYSTALLINE SILICON USING EXCIMER LASER IRRADIATION
NAYAR, V
BOYD, IW
GOODALL, FN
ARTHUR, G
[J]. APPLIED SURFACE SCIENCE, 1989, 36 (1-4) : 134 - 140
[8] NULMAN J, 1988, P NATO ADV STUD I BO
[9] ULTRAFAST UV-LASER-INDUCED OXIDATION OF SILICON - CONTROL AND CHARACTERIZATION OF THE SI-SIO2 INTERFACE
RICHTER, H
ORLOWSKI, TE
KELLY, M
MARGARITONDO, G
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) : 2351 - 2355
[10] UV-O3 AND DRY-O2 - 2-STEP ANNEALED CHEMICAL VAPOR-DEPOSITED TA2O5 FILMS FOR STORAGE DIELECTRICS OF 64-MB DRAMS
SHINRIKI, H
NAKATA, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) : 455 - 462

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