LASER-INDUCED OXIDATION OF SILICON

被引：24

作者：

BOYD, IW ^{[1
]}

WILSON, JIB ^{[1
]}

WEST, JL ^{[1
]}

机构：

[1] HUGHES MICROELECTR LTD,GLENROTHES,FIFE,SCOTLAND

来源：

THIN SOLID FILMS | 1981年 / 83卷 / 04期

关键词：

D O I：

10.1016/0040-6090(81)90658-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：L173 / L176

页数：4

相关论文

共 12 条

[1] INVESTIGATION OF CHEMICAL PROPERTIES OF STAIN FILMS ON SILICON BY MEANS OF INFRARED SPECTROSCOPY
BECKMANN, KH
[J]. SURFACE SCIENCE, 1965, 3 (04) : 314 - &
[2] HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM
CLINE, HE
ANTHONY, TR
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3895 - 3900
[3] FERRIS SD, 1979, LASER SOLID INTERACT
[4] IN-DEPTH OXYGEN CONTAMINATION PRODUCED IN SILICON BY PULSED LASER IRRADIATION
GARULLI, A
SERVIDORI, M
VECCHI, I
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (10) : L199 - &
[5] APPLICATIONS OF SCANNING CW LASERS AND ELECTRON-BEAMS IN SILICON TECHNOLOGY
GIBBONS, JF
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 121 - 128
[6] CALCULATION OF SOLID-PHASE REACTION-RATES INDUCED BY A SCANNING CW LASER
GOLD, RB
GIBBONS, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1256 - 1258
[7] INCORPORATION OF OXYGEN INTO SILICON DURING PULSED-LASER IRRADIATION
HOH, K
KOYAMA, H
UDA, K
MIURA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L375 - L378
[8] TEMPERATURE RISE INDUCED BY A LASER-BEAM
LAX, M
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3919 - 3924
[9] LIU YJ, UNPUBLISHED
[10] RAMAN MEASUREMENTS OF TEMPERATURE DURING CW LASER-HEATING OF SILICON
LO, HW
COMPAAN, A
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1565 - 1568