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LASER-INDUCED OXIDATION OF SILICON
被引:24
作者
:
BOYD, IW
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES MICROELECTR LTD,GLENROTHES,FIFE,SCOTLAND
HUGHES MICROELECTR LTD,GLENROTHES,FIFE,SCOTLAND
BOYD, IW
[
1
]
WILSON, JIB
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES MICROELECTR LTD,GLENROTHES,FIFE,SCOTLAND
HUGHES MICROELECTR LTD,GLENROTHES,FIFE,SCOTLAND
WILSON, JIB
[
1
]
WEST, JL
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES MICROELECTR LTD,GLENROTHES,FIFE,SCOTLAND
HUGHES MICROELECTR LTD,GLENROTHES,FIFE,SCOTLAND
WEST, JL
[
1
]
机构
:
[1]
HUGHES MICROELECTR LTD,GLENROTHES,FIFE,SCOTLAND
来源
:
THIN SOLID FILMS
|
1981年
/ 83卷
/ 04期
关键词
:
D O I
:
10.1016/0040-6090(81)90658-1
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:L173 / L176
页数:4
相关论文
共 12 条
[1]
INVESTIGATION OF CHEMICAL PROPERTIES OF STAIN FILMS ON SILICON BY MEANS OF INFRARED SPECTROSCOPY
BECKMANN, KH
论文数:
0
引用数:
0
h-index:
0
BECKMANN, KH
[J].
SURFACE SCIENCE,
1965,
3
(04)
: 314
-
&
[2]
HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM
CLINE, HE
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
GE,CTR RES & DEV,SCHENECTADY,NY 12301
CLINE, HE
ANTHONY, TR
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
GE,CTR RES & DEV,SCHENECTADY,NY 12301
ANTHONY, TR
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(09)
: 3895
-
3900
[3]
FERRIS SD, 1979, LASER SOLID INTERACT
[4]
IN-DEPTH OXYGEN CONTAMINATION PRODUCED IN SILICON BY PULSED LASER IRRADIATION
GARULLI, A
论文数:
0
引用数:
0
h-index:
0
GARULLI, A
SERVIDORI, M
论文数:
0
引用数:
0
h-index:
0
SERVIDORI, M
VECCHI, I
论文数:
0
引用数:
0
h-index:
0
VECCHI, I
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1980,
13
(10)
: L199
-
&
[5]
APPLICATIONS OF SCANNING CW LASERS AND ELECTRON-BEAMS IN SILICON TECHNOLOGY
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
GIBBONS, JF
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
: 121
-
128
[6]
CALCULATION OF SOLID-PHASE REACTION-RATES INDUCED BY A SCANNING CW LASER
GOLD, RB
论文数:
0
引用数:
0
h-index:
0
GOLD, RB
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
GIBBONS, JF
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(02)
: 1256
-
1258
[7]
INCORPORATION OF OXYGEN INTO SILICON DURING PULSED-LASER IRRADIATION
HOH, K
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
HOH, K
KOYAMA, H
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
KOYAMA, H
UDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
UDA, K
MIURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
MIURA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(07)
: L375
-
L378
[8]
TEMPERATURE RISE INDUCED BY A LASER-BEAM
LAX, M
论文数:
0
引用数:
0
h-index:
0
机构:
CUNY,CITY COLL,DEPT PHYS,NEW YORK,NY 10031
LAX, M
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(09)
: 3919
-
3924
[9]
LIU YJ, UNPUBLISHED
[10]
RAMAN MEASUREMENTS OF TEMPERATURE DURING CW LASER-HEATING OF SILICON
LO, HW
论文数:
0
引用数:
0
h-index:
0
LO, HW
COMPAAN, A
论文数:
0
引用数:
0
h-index:
0
COMPAAN, A
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(03)
: 1565
-
1568
←
1
2
→
共 12 条
[1]
INVESTIGATION OF CHEMICAL PROPERTIES OF STAIN FILMS ON SILICON BY MEANS OF INFRARED SPECTROSCOPY
BECKMANN, KH
论文数:
0
引用数:
0
h-index:
0
BECKMANN, KH
[J].
SURFACE SCIENCE,
1965,
3
(04)
: 314
-
&
[2]
HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM
CLINE, HE
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
GE,CTR RES & DEV,SCHENECTADY,NY 12301
CLINE, HE
ANTHONY, TR
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
GE,CTR RES & DEV,SCHENECTADY,NY 12301
ANTHONY, TR
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(09)
: 3895
-
3900
[3]
FERRIS SD, 1979, LASER SOLID INTERACT
[4]
IN-DEPTH OXYGEN CONTAMINATION PRODUCED IN SILICON BY PULSED LASER IRRADIATION
GARULLI, A
论文数:
0
引用数:
0
h-index:
0
GARULLI, A
SERVIDORI, M
论文数:
0
引用数:
0
h-index:
0
SERVIDORI, M
VECCHI, I
论文数:
0
引用数:
0
h-index:
0
VECCHI, I
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1980,
13
(10)
: L199
-
&
[5]
APPLICATIONS OF SCANNING CW LASERS AND ELECTRON-BEAMS IN SILICON TECHNOLOGY
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
GIBBONS, JF
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
: 121
-
128
[6]
CALCULATION OF SOLID-PHASE REACTION-RATES INDUCED BY A SCANNING CW LASER
GOLD, RB
论文数:
0
引用数:
0
h-index:
0
GOLD, RB
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
GIBBONS, JF
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(02)
: 1256
-
1258
[7]
INCORPORATION OF OXYGEN INTO SILICON DURING PULSED-LASER IRRADIATION
HOH, K
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
HOH, K
KOYAMA, H
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
KOYAMA, H
UDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
UDA, K
MIURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
MIURA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(07)
: L375
-
L378
[8]
TEMPERATURE RISE INDUCED BY A LASER-BEAM
LAX, M
论文数:
0
引用数:
0
h-index:
0
机构:
CUNY,CITY COLL,DEPT PHYS,NEW YORK,NY 10031
LAX, M
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(09)
: 3919
-
3924
[9]
LIU YJ, UNPUBLISHED
[10]
RAMAN MEASUREMENTS OF TEMPERATURE DURING CW LASER-HEATING OF SILICON
LO, HW
论文数:
0
引用数:
0
h-index:
0
LO, HW
COMPAAN, A
论文数:
0
引用数:
0
h-index:
0
COMPAAN, A
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(03)
: 1565
-
1568
←
1
2
→