APPLICATIONS OF SCANNING CW LASERS AND ELECTRON-BEAMS IN SILICON TECHNOLOGY

被引：7

作者：

GIBBONS, JF

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：121 / 128

页数：8

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[5] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS
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[7] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278
[8] USE OF A SCANNING CW KR LASER TO OBTAIN DIFFUSION-FREE ANNEALING OF B-IMPLANTED SILICON
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 389 - 391
[9] GAT A, 1979, J APPL PHYS, V50, P2929
[10] GIBBONS JF, 1978, 1978 P LAS SOL INT L