IN-DEPTH OXYGEN CONTAMINATION PRODUCED IN SILICON BY PULSED LASER IRRADIATION

被引：11

作者：

GARULLI, A

SERVIDORI, M

VECCHI, I

机构：

来源：

关键词：

D O I：

10.1088/0022-3727/13/10/006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L199 / &

共 18 条

[1] 2-STAGE LASER ANNEALING OF LATTICE DISORDER IN PHOSPHORUS IMPLANTED SILICON
BATTAGLIN, G
DELLAMEA, G
DRIGO, AV
FOTI, G
BENTINI, GG
SERVIDORI, M
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01): : 347 - 352
[2] BENTON JL, 1979, P C LASER ELECTRON B, P430
[3] PRECIPITATION OF COPPER IN SILICON
DAS, G
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4459 - 4467
[4] PRECIPITATION BEHAVIOUR OF COPPER IN SILICON SINGLE CRYSTALS
FIERMANS, L
VENNIK, J
[J]. PHYSICA STATUS SOLIDI, 1965, 12 (01): : 277 - &
[5] INFLUENCE OF CARBON ON PRECIPITATION OF COPPER IN SILICON SINGLE CRYSTALS
FIERMANS, L
VENNIK, J
[J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 463 - &
[6] MICROPROBE INVESTIGATIONS OF COPPER PRECIPITATES IN SILICON SINGLE CRYSTALS
FIERMANS, L
VENNIK, J
[J]. PHYSICA STATUS SOLIDI, 1967, 21 (02): : 627 - &
[7] DEFECTS IN SILICON SUBSTRATES
HU, SM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 17 - 31
[8] KIMERLING LC, 1979, P S LASER ELECTRON B, P385
[9] MILLER GL, 1978, SEMICONDUCTOR CHARAC, P502
[10] TRANSMISSION ELECTRON-MICROSCOPE INVESTIGATION OF GROWTH OF COPPER PRECIPITATE COLONIES IN SILICON
NES, E
WASHBURN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) : 3682 - 3688