A cryogenic GaAs PHEMT/ferroelectric Ku-band tunable oscillator

被引:11
作者
Romanofsky, RR [1 ]
Van Keuls, FW
Miranda, FA
机构
[1] NASA, Lewis Res Ctr, Cleveland, OH 44135 USA
[2] Natl Res Council, Lewis Res Ctr, NASA, Cleveland, OH USA
来源
JOURNAL DE PHYSIQUE IV | 1998年 / 8卷 / P3期
关键词
D O I
10.1051/jp4:1998337
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A Ku-band tunable oscillator operated at and below 77 K is described. The oscillator is based on two separate technologies: a 0.25 mu m GaAs pseudomorphic high electron mobility transistor (PHEMT) circuit optimized for cryogenic operation, and a gold microstrip ring resonator patterned on a thin ferroelectric (SrTiO3) film which was laser ablated onto a LaAlO3 substrate. A tuning range of up to 3% of the center frequency was achieved by applying de bias between the ring resonator and ground plane. To the best of our knowledge, this is the first tunable oscillator based on a thin film ferroelectric structure demonstrated in the microwave frequency range. The design methodology of the oscillator and the performance characteristics of the tunable resonator are described.
引用
收藏
页码:171 / 174
页数:4
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