Diamond growth in the presence of boron and sulfur

被引：32

作者：

Eaton, SC

Anderson, AB

Angus, JC

Evstefeeva, YE

Pleskov, YV

机构：

[1] Case Western Reserve Univ, Dept Chem Engn, Cleveland, OH 44106 USA

[2] Case Western Reserve Univ, Dept Chem, Cleveland, OH 44106 USA

[3] AN Frumkin Electrochem Inst, Moscow 117071, Russia

来源：

基金：

美国国家科学基金会;

关键词：

sulfur incorporation; co-doping; n-type conductivity; P-TYPE GAN; ELECTRICAL-PROPERTIES; MATERIALS DESIGN; FABRICATION; EMISSION; ALN; PREDICTION; SILICON; OXYGEN; DONOR;

D O I：

10.1016/S0925-9635(03)00202-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond was co-doped with sulfur and boron during deposition using hydrogen sulfide and trimethylboron in the source gases. Secondary ion mass spectroscopy (SIMS) confirmed the presence of sulfur and showed that the sulfur incorporation is concentrated in the near-surface region. Also, examination by scanning tunneling spectroscopy (STS) of a cleaved cross-section showed greater conductivity in the near-surface region. Hall effect, STS, the thermoelectric effect and Mott-Schottky analysis confirmed the n-type conductivity for films grown with sulfur and limited amounts of boron. The source of the donors is not known and could arise from defects or impurity bands. Additionally, the properties of a pn-junction using co-doped diamond for the n-type layers are discussed. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：1627 / 1632

页数：6

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