Electrical properties of graphite/homoepitaxial diamond contact

被引：17

作者：

Chen, YG

Hasegawa, M

Okushi, H

Koizumi, S

Yoshida, H

Sakai, T

Kobayashi, N

机构：

[1] AIST, Res Ctr Adv Carbon, Adv Diamond Semicond Res Team, Tsukuba, Ibaraki 3058565, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[3] AISt, JFCC Lab, FCT, Tsukuba, Ibaraki 3058565, Japan

[4] Toshiba Co Ltd, Kawasaki, Kanagawa 2128582, Japan

来源：

关键词：

diamond films; applications; ohmic contact; interface;

D O I：

10.1016/S0925-9635(01)00684-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contact's in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 x 10(3) and 1.18 Omega.cm(2), respectively. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：451 / 457

页数：7

共 16 条

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J].