One-dimensional growth mechanism of crystalline silicon nanowires

被引:92
作者
Zhang, YF [1 ]
Tang, YH [1 ]
Wang, N [1 ]
Lee, CS [1 ]
Bello, I [1 ]
Lee, ST [1 ]
机构
[1] City Univ Hong Kong, Ctr Super Diamond & Adv Film, COSDAF, Dept Phys & Mat Sci, Hong Kong, Peoples R China
关键词
D O I
10.1016/S0022-0248(98)00953-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Based on experimental observations of silicon nanowire growth, a new mechanism has been proposed for one-dimensional growth of crystalline nanowires from the vapor phase. In the growth process, an amorphous matrix is deposited from a vapor phase of unsaturated oxide nanoclusters. and subsequent phase separation in the matrix leads to the formation of nanowires with a single crystalline core and an oxide sheath. The oxide sheath serves to terminate the growth in the lateral direction, thus inducing the one-dimensional growth of crystalline nanowires. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:136 / 140
页数:5
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