Drain Current Model of a Four-Gate Dielectric Modulated MOSFET for Application as a Biosensor

被引：17

作者：

Ajay ^{[1
]}

Narang, Rakhi ^{[1
,2
]}

Saxena, Manoj ^{[3
]}

Gupta, Mridula ^{[1
]}

机构：

[1] Univ Delhi, Dept Elect Sci, Semicond Device Res Lab, New Delhi 110021, India

[2] Univ Delhi, Dept Elect, Sri Venkateswara Coll, New Delhi 110021, India

[3] Univ Delhi, Deen Dayal Upadhayaya Coll, Dept Elect, New Delhi 110015, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 08期

关键词：

Biosensor; conformal mapping; dielectric modulation; split-gate MOSFET; FIELD-EFFECT TRANSISTOR; THRESHOLD VOLTAGE MODEL; DEBYE-SCREENING LENGTH; ELECTRICAL DETECTION; DEVICES; DNA;

D O I：

10.1109/TED.2015.2441753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an analytical model of a four-gate dielectric modulated MOSFET for label-free electrical detection of the biomolecules has been proposed. To provide a binding site for the biomolecules, the channel region of MOSFET is left open in the four-gate configuration, which is conventionally covered by the gate electrode. As a result, the electrical characteristics of the device are affected by the neutral and charged biomolecules that binds to the underlap (open) channel region. The electrostatics is developed by solving a 2-D Poisson's equation, assuming a parabolic potential profile along the channel direction using the conformal mapping technique and subsequently the drain current model is developed. The change in the threshold voltage is used as a sensing metric for the detection of biomolecules after their immobilization in the open region. The characteristic trends are supported and verified using the ATLAS device simulation software.

引用

页码：2636 / 2644

页数：9

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