Field-effect transistors based on single-crystalline wires of bis-(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole)

被引：4

作者：

Fujiwara, E

Takada, M

Yamashita, Y

Tada, H ^{[1
]}

机构：

[1] Inst Mol Sci, Okazaki, Aichi 4448787, Japan

[2] Grad Univ Adv Studies, Okazaki, Aichi 4448585, Japan

[3] Tokyo Inst Technol, Dept Elect Sci & Technol, Yokohama, Kanagawa 2268502, Japan

[4] Japan Sci & Technol Corp, CREST, Kawaguchi 3320012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 1-7期

关键词：

field-effect transistor; mobility; single-crystalline wire; BTQBT; temperature dependence;

D O I：

10.1143/JJAP.44.L82

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We prepared single-crystalline wires of bis(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole), whose ends were anchored to the drain and source electrodes of bottom-contact-type field-effect transistors. The temperature dependence of carrier mobility was investigated in the range from 5 K to 330 K. The tunnel transport was found to be dominant at T < 30 K. Thermally activated hopping behavior was observed in the temperature range from 30K to 200K. The mobility decreased with increasing temperature at T > 200K, indicating that phonon scattering governs carrier transport in single-crystalline wires.

引用

页码：L82 / L84

页数：3

共 19 条

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