Ordered InAs quantum dots on pre-patterned GaAs(001) by local oxidation nanolithography

被引：27

作者：

Martín-Sánchez, J ^{[1
]}

González, Y ^{[1
]}

González, L ^{[1
]}

Tello, M ^{[1
]}

García, R ^{[1
]}

Granados, D ^{[1
]}

García, JM ^{[1
]}

Briones, F ^{[1
]}

机构：

[1] CSIC, CNM, Inst Microelect, Madrid 28760, Spain

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 284卷 / 3-4期

关键词：

nanostructures; patterned substrates; molecular beam epitaxy; quantum dots; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2005.06.055

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ordered InAs quantum dot (QD) arrays have been obtained oil pre-patterned GaAs (001) substrates by atomic force microscopy (AFM) local oxidation nanolithography. Prior to InAs molecular beam epitaxy (MBE) deposition, an ordered square array of nanoholes is formed at the GaAs pre-patterned surface following in Situ etching with atomic hydrogen. A low substrate temperature is maintained during the whole process in order to avoid pattern smoothing. Our results show that the density and dimensions of the nanolioles oil the GaAs surface determine InAs QD size, nucleation site and InAs dose necessary for their formation. As a function of the geometrical parameters of the nanohole array, we can obtain either ordered 2D arrays of separated QD, closely packed QD or localized areas for QD formation. (c) 2005 Elsevier B.V. All rights reserved.

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收藏

页码：313 / 318

页数：6

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