Site-controlled self-organization of InAs quantum dots

被引：27

作者：

Kohmoto, S ^{[1
]}

Nakamura, H ^{[1
]}

Ishikawa, T ^{[1
]}

Nishikawa, S ^{[1
]}

Nishimura, T ^{[1
]}

Asakawa, K ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, FESTA, Tsukuba, Ibaraki 3002635, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 88卷 / 2-3期

关键词：

site control; quantum dots; scanning tunneling microscope (STM); electron beam; self-organization; InAs;

D O I：

10.1016/S0921-5107(01)00889-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In situ site-control techniques for self-organized InAs quantum dots (QDs) have been developed using an electron beam (EB) and a scanning tunneling microscope (STM) probe combined with molecular beam epitaxy. In the in situ EB-assisted process, InAs dots are preferentially formed in shallow, sub-mum-size GaAs holes with the InAs supply. We find that the specific slope of a hole acts as a favorable site for dot formation. In the in situ STM probe-assisted process, the size and pitch of the holes are considerably reduced into nanoscale. InAs QDs are then self-organized only at the hole sites due to strain-induced selective nucleation. Using this process, two- and three-dimensional QD arrays are fabricated with nanometer precision. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：292 / 297

页数：6

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