Self-assembling quantum dot lattices through nucleation site engineering

被引：37

作者：

Gerardot, BD ^{[1
]}

Subramanian, G

Minvielle, S

Lee, H

Johnson, JA

Schoenfeld, WV

Pine, D

Speck, JS

Petroff, PM

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 236卷 / 04期

关键词：

nanostructures; nucleation; molecular beam epitaxy; self-assembly; quantum dots; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(02)00849-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The long range ordering of epitaxial semiconductor quantum dots is investigated using several crystal growth techniques on prepatterned substrates. We have developed two nucleation site control techniques: one which uses localized surface chemical potential engineering and one which uses localized surface strain engineering. We present experimental results that demonstrate the ability to create ordered quantum dot lattices and discuss the different mechanisms involved in the long range ordering of quantum dots. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：647 / 654

页数：8

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