Resonant localized donor state above the conduction band minimum in InN

被引：17

作者：

Dmowski, LH

Plesiewicz, JA

Suski, T

Lu, H

Schaff, W

Kurouchi, M

Nanishi, Y

Konczewicz, L

Cimalla, V

Ambacher, O

机构：

[1] UNIPRESS, Inst High Pressure Phys, PL-01142 Warsaw, Poland

[2] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

[3] Ritsumeikan Univ, Sch Sci & Engn, Dept Photon, Shiga 5258577, Japan

[4] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier, France

[5] Tech Univ Ilmenau, Ctr Micro & Nanotechnol, D-98693 Ilmenau, Germany

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 26期

关键词：

D O I：

10.1063/1.1977212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the pressure dependence of Hall electron concentration and mobility in degenerated, not intentionally doped InN samples. The results obtained for a whole set of samples with electron concentrations from 5.4x10(17) cm(-3) to 3.3x10(18) cm(-3) consistently reveal the existence of a localized donor type state, resonant with the conduction band. Its energy position is estimated to be about 80-90 meV above the bottom of the conduction band. This donor state is not the only source of electrons in these not intentionally doped samples and can be entirely populated and hidden in samples with very high electron concentrations.

引用

页码：1 / 3

页数：3

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