Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates

被引：187

作者：

Chakraborty, A

Haskell, BA

Keller, S

Speck, JS

Denbaars, SP

Nakamura, S

Mishra, UK ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, ERATO, JST, UCSB Grp, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 1-7期

关键词：

nonpolar; m-plane; InGaN; light-emitting diode; free-standing; electroluminescence;

D O I：

10.1143/JJAP.44.L173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication of nonpolar m-plane InGaN/GaN multiple-quantum well light-emitting diodes (LEDs) on freestanding in-plane GaN substrates. On-wafer continuous wave output power of 240 mu W was measured at 20 mA for a 300 x 300 mu m(2) device, and Output power as high as 2.95 mW was measured at 300 mA. There was no sign of saturation of the output power at high drive currents. An emission peak at 450 nm was obtained on electroluminescence measurements with high drive currents. The current-voltage characteristics of these LEDs showed rectifying behavior with a turn-on voltage of 3-4 V.

引用

页码：L173 / L175

页数：3

共 16 条

[11]

Nakamura S., 1997, BLUE LASER DIODE GAN

[12] Molecular-beam epitaxy of GaN/AlxGa1-xN multiple quantum wells on R-plane (10(1)over-bar-2) sapphire substrates [J].