Study of 1/f noise in InP grown by CBE

被引：15

作者：

Chen, XY ^{[1
]}

Leys, MR ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,DEPT PHYS,5600 MB EINDHOVEN,NETHERLANDS

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 08期

关键词：

D O I：

10.1016/0038-1101(96)00008-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The origin of low-frequency noise in InP was studied experimentally by measuring the noise of InP layers grown by chemical beam epitaxy (CBE). Such InP layers are unintentionally doped, but of varying purity and always of n-type conductivity. We performed noise measurements at temperatures from 77 to 300 K. Our results at 77 and 300 K prove that the mobility noise is exclusively due to the lattice scattering. The noise in InP is well characterized by a parameter alpha(Latt), which equals 3 x 10(-3) at 300 K and 2.3 x 10(-3) at 77 K. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：1149 / 1153

页数：5

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