Integration of silk protein in organic and light-emitting transistors

被引：127

作者：

Capelli, R. ^{[2
]}

Amsden, J. J. ^{[1
]}

Generali, G. ^{[2
]}

Toffanin, S. ^{[2
]}

Benfenati, V. ^{[2
]}

Muccini, M. ^{[2
]}

Kaplan, D. L. ^{[1
]}

Omenetto, F. G. ^{[1
,3
]}

Zamboni, R. ^{[2
,4
]}

机构：

[1] Tufts Univ, Dept Biomed Engn, Medford, MA 02155 USA

[2] CNR, Ist Studio Mat Nanostrutturati, I-40129 Bologna, Italy

[3] Tufts Univ, Dept Phys, Medford, MA 02155 USA

[4] CNR, Ist Sintesi Organ & Fotoreatt, I-40129 Bologna, Italy

来源：

ORGANIC ELECTRONICS | 2011年 / 12卷 / 07期

关键词：

Silk-tronics; Organic field effect transistors; Organic light emitting transistors; Natural biopolymers; FIELD-EFFECT TRANSISTOR; FIBROIN FILMS; ELECTRONICS; DEVICES; DIODES; EFFICIENCY; ROBUST;

D O I：

10.1016/j.orgel.2011.04.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present the integration of a natural protein into electronic and optoelectronic devices by using silk fibroin as a thin film dielectric in an organic thin film field-effect transistor (OFET) ad an organic light emitting transistor device (OLET) structures. Both n-(perylene) and ptype (thiophene) silk-based OFETs are demonstrated. The measured electrical characteristics are in agreement with high-efficiency standard organic transistors, namely charge mobility of the order of 10 (2) cm(2)/V s and on/off ratio of 10(4). The silk-based optoelectronic element is an advanced unipolar n-type OLET that yields a light emission of 100 nW. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1146 / 1151

页数：6

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